{"@context":"http://iiif.io/api/presentation/2/context.json","@id":"https://repo.library.stonybrook.edu/cantaloupe/iiif/2/manifest.json","@type":"sc:Manifest","label":"Defect Studies and Optimization of CVD Grown Boron Phosphide Films on Different Substrates","metadata":[{"label":"dc.description.sponsorship","value":"This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree."},{"label":"dc.format","value":"Monograph"},{"label":"dc.format.medium","value":"Electronic Resource"},{"label":"dc.identifier.uri","value":"http://hdl.handle.net/11401/76356"},{"label":"dc.language.iso","value":"en_US"},{"label":"dc.publisher","value":"The Graduate School, Stony Brook University: Stony Brook, NY."},{"label":"dcterms.abstract","value":"Boron phosphide (BP), a light III-V indirect semiconductor compound with medium band gap of 2.0 eV, has emerged as a promising material with its applications in solid-state neutron technology and semiconductor devices in extreme conditions. Since bulk BP is unavailable, heteroepitaxial film growth is being attempted on various substrates including silicon, silicon carbide (4H, 6H, 3C polytypes), AlN and sapphire of different orientations to determine the best substrate for growing high quality thin films. By investigating the defects (e.g. twins and grain boundaries, threading dislocations, stacking faults, inclusions) present in the BP epilayer using synchrotron white beam X-ray topography (SWBXT), high resolution X-ray diffraction (HRXRD), high resolution transmission electron microscopy (HRTEM) as well as other characterization techniques, the aim of this study is to gain insight on defect nucleation mechanisms, and develop strategies from the control of growth parameters (temperature, flux rate, reaction time, P/B ration) and the nature of substrate (Si or SiC, polytype of SiC, off-cut angle and direction) to achieve higher single crystalline quality for fabrication of neutron detectors. Detailed studies are listed below. 1) Defect studies of CVD grown BP epilayer on c-plane SiC substrates.  BP heteroepitaxial layers were grown by chemical vapor deposition (CVD) technique on 3C-SiC, 4H-SiC, and 6H-SiC substrates, among which 3C-SiC was grown as the buffer layer on Si to improve its quality and stability. Growth parameters varied from substrate off-cut angle, growth temperature, P/B ratio and growth time. SWBXT study revealed the basic epitaxial relationships of the BP"},{"label":"dcterms.available","value":"2017-09-20T16:50:05Z"},{"label":"dcterms.contributor","value":"Raghothamachar, Balaji"},{"label":"dcterms.creator","value":"Wang, Xuejing"},{"label":"dcterms.dateAccepted","value":"2017-09-20T16:50:05Z"},{"label":"dcterms.dateSubmitted","value":"2017-09-20T16:50:05Z"},{"label":"dcterms.description","value":"Department of Materials Science and Engineering."},{"label":"dcterms.extent","value":"64 pg."},{"label":"dcterms.format","value":"Monograph"},{"label":"dcterms.identifier","value":"http://hdl.handle.net/11401/76356"},{"label":"dcterms.issued","value":"2015-12-01"},{"label":"dcterms.language","value":"en_US"},{"label":"dcterms.provenance","value":"Made available in DSpace on 2017-09-20T16:50:05Z (GMT). No. of bitstreams: 1\nWang_grad.sunysb_0771M_12663.pdf: 13451957 bytes, checksum: a22bbba7b34503c526da90112751ed59 (MD5)\n  Previous issue date:    1"},{"label":"dcterms.publisher","value":"The Graduate School, Stony Brook University: Stony Brook, NY."},{"label":"dcterms.subject","value":"Characterization, HRXRD, Semiconductor, SWBXT, TEM, Thin Film"},{"label":"dcterms.title","value":"Defect Studies and Optimization of CVD Grown Boron Phosphide Films on Different Substrates"},{"label":"dcterms.type","value":"Thesis"},{"label":"dc.type","value":"Thesis"}],"description":"This manifest was generated dynamically","viewingDirection":"left-to-right","sequences":[{"@type":"sc:Sequence","canvases":[{"@id":"https://repo.library.stonybrook.edu/cantaloupe/iiif/2/canvas/page-1.json","@type":"sc:Canvas","label":"Page 1","height":1650,"width":1275,"images":[{"@type":"oa:Annotation","motivation":"sc:painting","resource":{"@id":"https://repo.library.stonybrook.edu/cantaloupe/iiif/2/77%2F61%2F72%2F77617278395945631105823964295820539913/full/full/0/default.jpg","@type":"dctypes:Image","format":"image/jpeg","height":1650,"width":1275,"service":{"@context":"http://iiif.io/api/image/2/context.json","@id":"https://repo.library.stonybrook.edu/cantaloupe/iiif/2/77%2F61%2F72%2F77617278395945631105823964295820539913","profile":"http://iiif.io/api/image/2/level2.json"}},"on":"https://repo.library.stonybrook.edu/cantaloupe/iiif/2/canvas/page-1.json"}]}]}]}