{"@context":"http://iiif.io/api/presentation/2/context.json","@id":"https://repo.library.stonybrook.edu/cantaloupe/iiif/2/manifest.json","@type":"sc:Manifest","label":"Experimental Study of Electron Transport through Nanometer-Scale Metal-Oxide Junctions","metadata":[{"label":"dc.description.sponsorship","value":"This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree."},{"label":"dc.format","value":"Monograph"},{"label":"dc.format.medium","value":"Electronic Resource"},{"label":"dc.identifier.uri","value":"http://hdl.handle.net/11401/72694"},{"label":"dc.language.iso","value":"en_US"},{"label":"dc.publisher","value":"The Graduate School, Stony Brook University: Stony Brook, NY."},{"label":"dcterms.abstract","value":"This work presents results of an experimental study of electron transport through few nanometer-scale metal oxide junctions of two types:First, we have measured transport properties of Nb/Al/Nb junctions fabricated using thermal oxidation or rf-plasma oxidation at various conditions, with rapid thermal post-annealing (RTA) to improve junction endurance in electric fields in excess of 10 MV/cm. The results indicate that such junctions may combine high field endurance (corresponding to at least 10^10 write/erase cycles in floating-gate memories) and high current density (corresponding to 30-ns-scale write/erase time) at high voltages, with very low conductance (corresponding to retention time scale ~0.1 s) at low voltages. We discuss the improvements necessary for the use of such junctions in advanced floating-gate memories.Second, we have studied resistive bistability (memory) effects in junctions based on several metal oxides, with a focus on sample-to-sample reproducibility which is necessary for the practical use of such junctions, in particular as crosspoint devices of hybrid CMOS/nanoelectronic circuits. Few-nm-thick layers of NbOx, CuOx and TiOx have been formed by thermal and plasma oxidation, at various deposition and oxidation conditions, both with or without rapid thermal post-annealing. The resistive bistability effect has been observed for all these materials, with particularly high switching endurance (over 1000 switching cycles) obtained for single-layer TiO2 junctions, and the best reproducibility reached for multi-layer junctions of the same material. Fabrication optimization has allowed us to improve the OFF/ON resistance ratio to about 1000, though the sample-to-sample reproducibility is so far still lower than that required for large scale integration."},{"label":"dcterms.available","value":"2015-04-24T14:53:15Z"},{"label":"dcterms.contributor","value":"James E. Lukens"},{"label":"dcterms.creator","value":"Tan, Zhongkui"},{"label":"dcterms.dateAccepted","value":"2012-05-15T18:07:07Z"},{"label":"dcterms.dateSubmitted","value":"2015-04-24T14:53:15Z"},{"label":"dcterms.description","value":"Department of Physics"},{"label":"dcterms.format","value":"Monograph"},{"label":"dcterms.identifier","value":"http://hdl.handle.net/11401/72694"},{"label":"dcterms.issued","value":"2010-05-01"},{"label":"dcterms.language","value":"en_US"},{"label":"dcterms.provenance","value":"Made available in DSpace on 2012-05-15T18:07:07Z (GMT). No. of bitstreams: 1\nTan_grad.sunysb_0771E_10020.pdf: 3007080 bytes, checksum: 3418cd5023a4eb72a9f9789c7d5e1fe0 (MD5)\n  Previous issue date:    1"},{"label":"dcterms.publisher","value":"The Graduate School, Stony Brook University: Stony Brook, NY."},{"label":"dcterms.subject","value":"crested barrier, electron transport, metal oxide, rapid thermal annealing, reproducibility, resistive bistability"},{"label":"dcterms.title","value":"Experimental Study of Electron Transport through Nanometer-Scale Metal-Oxide Junctions"},{"label":"dcterms.type","value":"Dissertation"},{"label":"dc.type","value":"Dissertation"}],"description":"This manifest was generated dynamically","viewingDirection":"left-to-right","sequences":[{"@type":"sc:Sequence","canvases":[{"@id":"https://repo.library.stonybrook.edu/cantaloupe/iiif/2/canvas/page-1.json","@type":"sc:Canvas","label":"Page 1","height":1650,"width":1275,"images":[{"@type":"oa:Annotation","motivation":"sc:painting","resource":{"@id":"https://repo.library.stonybrook.edu/cantaloupe/iiif/2/53%2F32%2F45%2F53324572822346385413273127414135577934/full/full/0/default.jpg","@type":"dctypes:Image","format":"image/jpeg","height":1650,"width":1275,"service":{"@context":"http://iiif.io/api/image/2/context.json","@id":"https://repo.library.stonybrook.edu/cantaloupe/iiif/2/53%2F32%2F45%2F53324572822346385413273127414135577934","profile":"http://iiif.io/api/image/2/level2.json"}},"on":"https://repo.library.stonybrook.edu/cantaloupe/iiif/2/canvas/page-1.json"}]}]}]}